Improved Independent Failure Unit Model for ElectromigrationChinese Full Text
Li Zhihong; Gu Ye; Wu Guoying and Wang Yangyuan(Institute of Microelectronics, Peking University,Beijing 100871)
Abstract: Abstract Independent Failure Unit Model(IFU) currently used to predict Electromigration failure is inadequate.According to physical mechanism and some necessary assumptions,the model has been modified. The triple points instead of grains are considered as the Independent Failure Units, and it’s no longer assumed that t50 of each IFU is independent on the size of grain. Our simulation results, the relations of lifetime with both linewidth and grain size, are more consistent with the experimental ... More
- Series:
(I) Electronic Technology & Information Science
- Subject:
Wireless Electronics
- Classification Code:
TN470.597
- Mobile Reading
Read on your phone instantly
Step 1
Scan QR Codes
"Mobile CNKI-CNKI Express" App
Step 2
Open“CNKI Express”
and click the scan icon in the upper left corner of the homepage.
Step 3
Scan QR Codes
Read this article on your phone.
- Download
- Online Reading

Download the mobile appuse the app to scan this coderead the article.
Tips: Please download CAJViewer to view CAJ format full text.
Download: 94 Pagecount: 6 Size: 210k
Citation Network
Related Literature
- Similar Article
- Reader Recommendation
- Associated Author
- [1]VLSI多层互连可靠性 第一部分 电迁移失效(二)[J]. 武国英,李志宏,陈文茹,郝一龙. 微电子技术. 1994(02)
- [2]VLSI多层互连可靠性 第一部分:电迁移失效(一)[J]. 武国英,李志宏,陈文茹,郝一龙. 微电子技术. 1994(01)
- [3]几种快速分析电迁移失效的新技术[J]. 张蓓榕,孙沩. 微电子学与计算机. 1993(03)
- [4]VLSI的电迁移及其微测试技术[J]. 张安康. 电子器件. 1993(02)
- [5]掺杂硅和金属通孔结构电迁移对比研究[J]. 范伟海. 半导体技术. 2022(05)
- [6]硅通孔电迁移寿命评价系统设计[J]. 张立廷,龚涛,陈思,周斌,卢向军. 电子测量技术. 2025(02)
- [7]VLSI电迁移效应及自制型电迁移测试系统[J]. 胡子信,陈胜福,董伟淳. 中国集成电路. 2004(01)
- [8]通过电源完整性分析和电迁移修复提高供电网络可靠性[J]. 王晶,蔡懿慈,周强. 计算机辅助设计与图形学学报. 2022(04)
- [9]40nm节点低阻接触栓的电迁移可靠性优化[J]. 张亮,张慧君,曹永峰. 半导体技术. 2014(07)
- [10]鳍式场效应晶体管结合自热效应的电迁移分析[J]. 张骁竣,季昊,聂笔剑. 电子技术应用. 2019(08)