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Electronics ＆ Packaging.
(Accepted Version) Online First Publishing Date: 2025-02-13 08:33:57

Research Progress on Advanced Copper-Filled Through-Silicon Via Preparation TechnologyChinese Full Text

LIU Xudong;SA Zicheng;LI Haozhe;LI Jiaqi;TIAN Yanhong;

Abstract: With the advent of the more than Moore， through-silicon via （TSV） technology has achieved electrical interconnection between multi-layer chips by filling copper as vertical conductive pathways， providing a high-performance， high-reliability 3D packaging interconnection solution. The preparation for copper in TSV advanced interconnect technology is reviewed. The deposition mechanisms， performance and improvement options of five different copper seed layer preparation processes including sputterin... More
Keywords：

copper-filled through-silicon via; advanced packaging; electrodeposition; seed layer;

  • DOI：

    10.16257/j.cnki.1681-1070.2025.0075

  • Series：

    (I) Electronic Technology ＆ Information Science

  • Subject：

    Wireless Electronics

  • Classification Code：

    TN405

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